原子層沉積工藝（ALD）

在過去幾年中，原子層沉積（ALD）已成為微電子設(shè)備生產(chǎn)中沉積高 K（高導(dǎo)通率）柵極氧化物、阻擋層和種子層的常用工藝。在光伏領(lǐng)域，ALD 被用于緩沖層和背面鈍化。

由于工藝開發(fā)的復(fù)雜性，工藝監(jiān)測和控制對于加快開發(fā)周期、降低成本和了解眾多工藝參數(shù)之間的相互作用至關(guān)重要。

在原子層沉積 (ALD) 過程中，原位工具可用于薄膜厚度和蝕刻控制、薄膜疊層分析和溫度均勻性。LayTec原位工具應(yīng)用于ALD反應(yīng)堆：

- 薄膜厚度監(jiān)測

- 蝕刻控制

- 薄膜疊層分析分級

- 溫度均勻性監(jiān)控

LayTec 的 EpiTT 現(xiàn)場測量系統(tǒng)已成功應(yīng)用于太陽能電池應(yīng)用的空間 ALD 工藝和下一代閃存的多層電介質(zhì) ALD 制造。

英文：

Over the last few years, Atomic Layer Deposition (ALD) has become a common process in the production of microelectronic devices to deposit high-k (high permittivity) gate oxides, barrier and seed layers. 

In photovoltaics, ALD is applied for buffer layers and backside passivation. Due to the complexity of the process development, process monitoring and control are crucial in order to accelerate development 

cycles, reduce costs and understand the interaction of numerous process parameters.

During Atomic Layer Deposition (ALD), in-situ tools are used for film thickness and etching control, film stack analysis and temperature homogeneity.LayTec in-situ tools are applied in ALD reactors for:

? Film thickness monitoring

? Etching control

? Film stack analysis grading

? Monitoring of temperature homogeneity

LayTec’s EpiTT in-situ metrology systems are already successfully applied in spatial ALD processes for solar cell applications and in ALD manufacturing of multi-layer dielectrics for next-generation 

flash memories.